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1 jan. 2013 rev. 2. 0 bcd semiconductor manufacturing limited data sheet low power quad operational amplifiers as324/324a figure 1. package types of as324/324a general description the as324/324a consist of four independent, high gain and internally frequency compensated operational amplifiers. they are specifi cally designed to operate from a single power supply. operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage. typical applications include transducer amplifiers, dc gain blocks and most conventional operational amplifier circuits. the as324/324a series are compatible with industry standard 324. as324a has more stringent input offset voltage than as324. the as324 is available in soic-14, dip-14 and tssop-14 packages, as324a is available in soic-14 package. features internally frequency compensated for unity gain large voltage gain: 100db (typical) low input bias current: 20na (typical) low input offset voltage: 2mv (typical) low supply current: 0.5ma (typical) wide power supply voltage range: single supply: 3v to 36v dual supplies: 1.5v to 18v input common mode voltage range includes ground large output voltage swing: 0v to v cc -1.5v power drain suitable for battery operation application battery charger cordless telephone switching power supply dip-14 soic-14 tssop-14
2 jan. 2013 rev. 2. 0 bcd semiconductor manufacturing limited data sheet low power quad operational amplifiers as324/324a q2 q4 q3 q1 q8 q9 6 a 4 a q10 q11 50 a q5 q6 q13 rsc cc 100 a q7 inputs + - output q12 v cc pin configuration figure 2. pin configuration of as324/324a (top view) functional block diagram figure 3. functional block diagram of as324/324a (each amplifier) ordering information circuit type package e1: lead free g1: green as324 tr: tape and reel blank: tube m: soic-14 p: dip-14 - blank: as324 a: as324a g: tssop-14 input 1- input 1+ v cc input 2+ input 2- output 2 output 1 output 4 input 4- input 4+ gnd input 3+ input 3- output 3 1 2 3 4 5 6 7 14 13 12 11 10 9 8 1 2 3 4 5 6 7 14 13 12 11 10 9 8 m/g package (soic-14/tssop-14) p package (dip-14) input 1- input 1+ v cc input 2+ input 2- output 2 output 1 output 4 input 4- input 4+ gnd input 3+ input 3- output 3
3 jan. 2013 rev. 2. 0 bcd semiconductor manufacturing limited data sheet low power quad operational amplifiers as324/324a absolute maximum ratings (note 1) recommended operating conditions parameter symbol value unit supply voltage v cc 40 v differential input voltage v id 40 v input voltage v in -0.3 to 40 v total power dissipation (t a =25 o c) p d dip-14 1130 mw soic-14 800 tssop-14 710 operating junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10 seconds) t lead 260 o c parameter symbol min max unit supply voltage v cc 336 v ambient operating temperature range t a -40 85 o c note 1: stresses greater than those listed under "a bsolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolute max- imum ratings" for extended periods may affect device reliability. ordering information (continued) bcd semiconductor's pb-free product s, as designated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages. package temperature range part number marking id packing type lead free green lead free green soic-14 -40 to 85 o c as324m-e1 as324m-g1 as324m-e1 as324m-g1 tube as324mtr-e1 as324mtr-g1 as324m-e1 as324m-g1 tape & reel as324am-e1 AS324AM-G1 as324am-e1 AS324AM-G1 tube as324amtr-e1 as324amtr-g1 as324am-e1 AS324AM-G1 tape & reel dip-14 as324p-e1 as324p-g1 as324p-e1 as324p-g1 tube tssop-14 as324gtr-e1 as324gtr-g1 egs324 ggs324 tape & reel
4 jan. 2013 rev. 2. 0 bcd semiconductor manufacturing limited data sheet low power quad operational amplifiers as324/324a parameter symbol test conditions min typ max unit input offset voltage v io v o =1.4v, r s =0 , v cc =5v to 30v as324 25 mv 7 as324a 23 mv 5 average temperature coeffi- cient of input offset voltage v io / t t a =-40 to 85 o c 7 v/ o c input offset current i io i in + - i in -, v cm =0v 530 na 100 input bias current i bias i in + or i in -, v cm =0v 20 100 na 200 input common mode voltage range (note 3) v ir v cc =30v 0 v cc -1.5 v supply current i cc t a =-40 to 85 o c, r l = v cc =30v 1.0 3 ma v cc =5v 0.7 1.2 large signal voltage gain g v v cc =15v, r l 2k , v o =1v to 11v 85 100 db 80 common mode rejection ratio cmrr dc, v cm =0 to (v cc -1.5)v 60 70 db 60 power supply rejection ratio psrr v cc =5 to 30v 70 100 db 60 channel separation cs f=1khz to 20khz -120 db output current source i source v in +=1v, v in -=0v, v cc =15v, v o =2v 20 40 ma 20 sink i sink v in +=0v, v in -=1v, v cc =15v, v o =2v 10 15 ma 5 v in +=0v, v in -=1v, v cc =15v, v o =0.2v 12 50 a output short circuit current to ground i sc v cc =15v 40 60 ma output voltage swing v oh v cc =30v, r l =2k 26 v 26 v cc =30v, r l =10k 27 28 27 v ol v cc =5v, r l = 10k 520 mv 30 thermal resistance (junction to case) jc dip-14 24.78 o c/w soic-14 36.78 electrical characteristics limits in standard typeface are for t a =25 o c, bold typeface applies over t a =-40 o c to 85 o c (note 2), v cc =5v, gnd=0v, unless otherwise specified. note 2: limits over the full temperature are guar anteed by design, but not tested in production.
5 jan. 2013 rev. 2. 0 bcd semiconductor manufacturing limited data sheet low power quad operational amplifiers as324/324a typical performance characteristics 0 5 10 15 0 5 10 15 positive negative input voltage (+ v dc ) power supply voltage (+ v dc ) figure 4. input voltage range figure 5. input current figure 6. supply current figure 7. voltage gain 0 5 10 15 20 25 30 35 40 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 supply current (ma) supply voltage (v) -25 0 25 50 75 100 125 0 3 6 9 12 15 18 21 24 27 30 input current (na) temperature ( o c) 0 8 16 24 32 40 60 75 90 105 120 power supply voltage (v) voltage gain (db) r l =2k r l =20k electrical characteristics (continued) note 3: the input common-mode voltage of either input signal voltage should not be allowed to go negatively by more than 0.3v (at 25 o c ). the upper end of the common-mode voltage range is v cc -1.5v (at 25 o c ), but either or both inputs can go to +36v without damages, independent of the magnitude of the v cc .
6 jan. 2013 rev. 2. 0 bcd semiconductor manufacturing limited data sheet low power quad operational amplifiers as324/324a typical performance ch aracteristics (continued) figure 8. open loop frequency response figure 9. voltage follower pulse response input time ( s) output voltage (v) voltage (v) figure 10. voltage follower pulse response (small signal) time ( s) output voltage (mv) figure 11. large signal frequency response 1 10 100 1k 10k 100k 1m 0 10 20 30 40 50 60 70 80 90 100 110 120 voltage gain (db) frequency (hz) 1k 10k 100k 1m 0 5 10 15 20 frequency (hz) output swing (v) 0 1 2 3 1 2 3 4 0 0481216202428323640 012345678910 0 50 100 150 200 250 300
7 jan. 2013 rev. 2. 0 bcd semiconductor manufacturing limited data sheet low power quad operational amplifiers as324/324a figure 12. output characteristics : current sourcing figure 14. current limiting figure 13. output characteristics : current sinking -25 0 25 50 75 100 125 0 10 20 30 40 50 60 70 80 90 100 output current (ma) temperature ( o c) typical performance ch aracteristics (continued) 1e-3 0.01 0.1 1 10 100 0 1 2 3 4 5 6 7 8 output voltage referenced to v cc (v) output source current (ma) vo v cc i o v cc /2 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 10 v cc =15v output voltage (v) output sink current (ma) v cc =5v v cc /2 vo v cc i o
8 jan. 2013 rev. 2. 0 bcd semiconductor manufacturing limited data sheet low power quad operational amplifiers as324/324a figure 15. battery charger figure 16. dc summing amplifier figure 17. power amplifier ac line smps r2 current sense r7 r8 battery pack r4 r3 az431 r5 r1 opto isolator v cc gnd gnd 1/4 as324/a + - 1/4 as324/a r6 + - v cc r6 100k v o r5 100k r1 100k r2 100k r3 100k r4 100k +v 1 +v 2 +v 3 +v 4 1/4 as324/a + - r1 910k v o r2 100k r3 91k v in(+) v cc r l 1/4 as324/a - + typical applications
9 jan. 2013 rev. 2. 0 bcd semiconductor manufacturing limited data sheet low power quad operational amplifiers as324/324a typical applicat ions (continued) figure 20. pulse generator figure 19. ac coupled non-inverting amplifier figure 21. dc coupled low-pass rc active filter figure 18. fixed current sources v cc r4 3k r3 2k + - 2v + - 2v i1 i2 1ma 1/4 as324/a r1 2k r2 - + v o r2 16k r1 16k v in r3 100k 1/4 as324/a r4 100k c2 0.01 f c1 0.01 f f o v o 0 f o =1khz q=1 a v =2 + - r5 100k r3 100k r4 100k r2 100k r1 1m v o v cc 1/4 as324/a 0.001 f - + r4 100k v cc r3 1m r1 100k r2 1m c1 0.1 f c in r5 100k c o v o 1/4 as324/a r l 10k c2 10 f a v =1+r2/r1 a v =11 (as shown) - + ac r b 6.2k
10 jan. 2013 rev. 2. 0 bcd semiconductor manufacturing limited data sheet low power quad operational amplifiers as324/324a mechanical dimension dip-14 unit: mm(inch) 4 0.254(0.010) 5 10 10 4 18.800(0.740) 19.200(0.756) 0.360(0.014) 0.560(0.022) 2.540(0.100)typ r1.000(0.039) 0.130(0.005)min 7.620(0.300)typ 0.700(0.028) 3.000(0.118) depth 0.100(0.004) 0.200(0.008) 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 1.600(0.063) 1.800(0.071) 1.600(0.063) 1.800(0.071) 1.524(0.060) typ 3.000(0.118) 3.600(0.142) 0.510(0.020)min 6.200(0.244) 6.600(0.260) note: eject hole, oriented hole and mold mark is optional.
11 jan. 2013 rev. 2. 0 bcd semiconductor manufacturing limited data sheet low power quad operational amplifiers as324/324a mechanical dime nsion (continued) soic-14 unit: mm(inch) ? note: eject hole, oriented hole and mold mark is optional. 8.550(0.337) 1.350(0.053) 7 7 0.700(0.028) 0.100(0.004) 0 . 2 5 0 ( 0 . 0 1 0 ) 0.500(0.020) 1 r0.200(0.008) 20:1 a 0.280(0.011) 45 8 a 8 0 . 1 9 0 ( 0 . 0 0 7 ) 9 . 5 8 0 8 depth 0.060(0.002) 0.100(0.004) 2.000(0.079) 1.270(0.050) 1.000(0.039) 1 . 3 0 0 ( 0 . 0 5 1 ) 5 . 8 0 0 ( 0 . 2 2 8 ) 8.750(0.344) 0.250(0.010) 1 . 7 5 0 ( 0 . 0 6 9 ) 0 . 2 5 0 ( 0 . 0 1 0 ) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.510(0.020) 6 . 2 0 0 ( 0 . 2 4 4 ) 0.600(0.024) 5 r0.200(0.008) 0 . 2 5 0 ( 0 . 0 1 0 ) 0 . 2 0 0 ( 0 . 0 0 8 ) m i n 0.480(0.019) 45
12 jan. 2013 rev. 2. 0 bcd semiconductor manufacturing limited data sheet low power quad operational amplifiers as324/324a mechanical dime nsion (continued) tssop-14 unit: mm(inch) note: eject hole, oriented hole and mold mark is optional. see detail a detail a 0 8 top&bottom 1.000(0.039) ref 4.300(0.169) 4.500(0.177) 6.200(0.244) 6.600(0.260) 4.860(0.191) 5.060(0.199) 0.340(0.013) 0.540(0.021) index 0.050(0.002) 0.150(0.006) 0.900(0.035) 1.050(0.041) 0.650(0.026) 0.200(0.008) 0.280(0.011) 0.250(0.010) 0.450(0.018) 0.750(0.030) # 1 pin 0.950(0.037) 1.050(0.041) dep 0 0.100(0.004) 0.100(0.004) 0.190(0.007) r0.090(0.004) r0.090(0.004) 10 14 0.200(0.008) 1.200(0.047) max
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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